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| savantic semiconductor product specification silicon npn power transistors 2N4913 2n4914 2n4915 description with to-3 package complement to type 2n4904/4905/4906 low collector saturation voltage applications for general?purpose switching and power amplifier applications. pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit 2N4913 40 2n4914 60 v cbo collector-base voltage 2n4915 open emitter 80 v 2N4913 40 2n4914 60 v ceo collector-emitter voltage 2n4915 open base 80 v v ebo emitter-base voltage open collector 5 v i c collector current 5 a i b base current 1 a p d total power dissipation t c =25 87.5 w t j junction temperature 150 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 2.0 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2N4913 2n4914 2n4915 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2N4913 40 2n4914 60 v ceo(sus) collector-emitter sustaining voltage 2n4915 i c =0.2a ;i b =0 80 v v cesat-1 collector-emitter saturation voltage i c =2.5a; i b =0.25a 1.0 v v cesat-2 collector-emitter saturation voltage i c =5a ;i b =1a 1.5 v v be base-emitter on voltage i c =2.5a ; v ce =2v 1.4 v i ceo collector cut-off current v ce =rated v ceo ; i b =0 1.0 ma i cbo collector cut-off current v cb =rated v cbo ; i e =0 1.0 ma i cev collector cut-off current v ce = rated v ceo ; v be(off) =1.5v t c =150 1.0 2.0 ma i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma h fe-1 dc current gain i c =2.5a ; v ce =2v 25 100 h fe-2 dc current gain i c =5a ; v ce =2v 7 f t transition frequency i c =1a ; v ce =10v;f=1.0mhz 4 mhz savantic semiconductor product specification 3 silicon npn power transistors 2N4913 2n4914 2n4915 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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